1 July 2013

Special issue: "Semiconductors: Microstructure and Properties"

International Journal of Nanoparticles 6(2/3) 2013

Expanded versions of papers presented at the 11th Beam Injection Assessment of Microstructure of Semiconductors (BIAMS) Workshop.

  • Scanning laser induced current measurements on silicon wafer with through silicon via structure
  • Illuminated versus dark lock-in thermography investigations of solar cells
  • Properties of Al-doped ZnO thin films grown by pulsed laser deposition on Si(100) substrates
  • Interaction between a laser beam and semiconductor nanowires: application to the Raman spectrum of Si nanowires
  • Annealing effect on photoluminescence properties of SiO2/SiNx coating
  • Characterisation of TCO AZO/glass structures by spectroscopic ellipsometry
  • Characteristics of Al-doped TiO2 thin films grown by pulsed laser deposition
  • Evaluation of diameter effects of individual coaxial SiC/SiO2 nanowires on their acoustic parameters
  • Ultraviolet MSM photodetector with fast response based on ZnO thin film
  • Effect of annealing on the structural and optical properties of sputtered HfNx thin films
  • TiO2 thin films studied by FTIR, AFM and spectroscopic ellipsometry
  • Characterisation of ZnO thin films doped and co-doped grown by pneumatic spray pyrolysis
  • Low energy electron irradiation effect on optical and electrical properties of InGaN/GaN multiple quantum well structures
  • Electroluminescence properties of InGaN/GaN multiple quantum well light emitting diodes
  • An EBIC model to describe two close grain boundaries in semiconductors
  • Calculation of an n+pSi diode collection efficiency and comparison with experiments
  • Physical modelling of carbon nanotube field effect transistor
  • Effect of the surface recombination and the depletion region on the electron beam induced current at a Schottky nanocontact
  • Investigation of ZnO nanostructures: effect of metal and spinning speed on the physical properties
  • Microstructure and opto-electrical properties of SnO2:In2O3 alloys thin films prepared by ultrasonic spray
  • Impact of the polysilicon doping level and thermal oxidation on the properties of P-MOS capacitor structures

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