15 October 2014

Special issue published: "Nanoelectronics II"

International Journal of Nanotechnology 11(12) 2014
  • Random-work-function-induced characteristic fluctuation in 16-nm-gate bulk and SOI FinFETs
  • Modelling and characterisation of flat-band roll-off behaviours in LaOx capped high-K/metal-gate NMOSFET with 28 nm CMOS technology
  • Fabrication of highly ordered nanohoneycomb (ZnO/Pt) arrays
  • In situ indium-induced crystallisation of low temperature nano-poly silicon (LTNPS) thin film on ITO glass substrate
  • Growth and characteristic of high orientation indium nitride films grown on (100) silicon substrate
  • Study on nanoparticles embedded multilayer gate dielectric MOS non-volatile memory devices
  • Effect of Au nanoparticles added in nanocrystalline TiO2 film on the photoelectrode of dye-sensitised solar cells
  • Molecular dynamics simulation of the nano-ejection system with various interfacial wettabilities
  • Fabrication of large diameter TiO2 nanotube for bone morphogenetic protein-2 delivery
  • Effects of fluorine implantation on polysilicon with high-k Er2O3 dielectrics
  • Volatile organic solvents sensing using silicon nanowires array fabricated by spontaneous electrochemical reaction
  • Formation of Ni-driven nano-sized structures on Ag/Ge(111)-√3 × √3 surface: STM study
  • The effect of ethyl cellulose on TiO2 pastes for DSSCs application
  • Characterisation of self-ordered porous anodic alumina by X-ray diffraction line profile analysis
  • Cancer stem-like cells photothermolysed by gold nanorod-mediated near-infrared laser irradiation
  • The analysis of magnetic controlled DC sputtering AZO films

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