Special issue published: "Nanotechnology Based Devices and Nanostructures"

International Journal of Nanoparticles 10(1/2) 2018

• GaAs SOI FinFET: impact of gate dielectric on electrical parameters and application as digital inverter
• An insight into the high frequency analysis of work function modulated cylindrical surrounding gate MOSFET
• Variation of optical bandwidth in defected ternary photonic crystal under different polarisation conditions
• Adsorption of gaseous air pollutants over Ti-doped ZGNR structures: a DFT study
• Effects of hot-carrier degradation on the low frequency noise in strained-Si p-MOSFETs
• Study on surface plasmon-based improvement in absorption in plasmonic solar cell
• An approach to various carriers' transmission properties and significant parameters in special semiconductor arrangement 'superlattice'
• Staggered heterojunctions-based tunnel-FET for application as a label-free biosensor
• Analysis of power consumption and delay of an inverter circuit using TMJLSRG MOSFET for the design of digital integrated circuit
• Millimetre-wave and terahertz IMPATT sources: influence of inter-carrier interactions
• Implementation of quadruple valued flip-flops using CMOS and spatial light modulator-based Savart plate