6 December 2014

Special issue published: "2013 International Electron Devices and Materials Symposium"

International Journal of Nanotechnology 12(1/2) 2015

Expanded versions of papers from the International Electron Devices and Materials Symposium (IEDMS 2013).
  • The IGZO fully transparent oxide thin film transistor on glass substrate
  • Intrinsic I-V and C-V characteristics of ultra-thin oxide MOS (p) and MOS (n) structures under deep depletion
  • Ultra low-temperature microwave annealing for ultra-shallow junctions and P-MOS devices
  • Exploring failure mechanisms of near ultraviolet AlGaN/GaN light-emitting diodes by reverse-bias stress in water vapour
  • Fabrication of finlike thin-film transistors by solution-processed zinc oxide and nanoimprint lithography
  • Kink effect for 28 nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures
  • Fabrication of Si and Ge vertical nanowire for transistor applications
  • A Si-based bulk FinFET by novel etching process with mask-less and photoresist-free lithography technique
  • Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry
  • Doping profile optimisation in bulk FinFET channel and source/drain extension regions for low off-state leakage
  • Upper/lower-side random dopant fluctuation on 16-nm-gate HKMG bulk FinFET

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