Expanded versions of papers from the International Electron Devices and Materials Symposium (IEDMS 2013).
- The IGZO fully transparent oxide thin film transistor on glass substrate
- Intrinsic I-V and C-V characteristics of ultra-thin oxide MOS (p) and MOS (n) structures under deep depletion
- Ultra low-temperature microwave annealing for ultra-shallow junctions and P-MOS devices
- Exploring failure mechanisms of near ultraviolet AlGaN/GaN light-emitting diodes by reverse-bias stress in water vapour
- Fabrication of finlike thin-film transistors by solution-processed zinc oxide and nanoimprint lithography
- Kink effect for 28 nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures
- Fabrication of Si and Ge vertical nanowire for transistor applications
- A Si-based bulk FinFET by novel etching process with mask-less and photoresist-free lithography technique
- Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry
- Doping profile optimisation in bulk FinFET channel and source/drain extension regions for low off-state leakage
- Upper/lower-side random dopant fluctuation on 16-nm-gate HKMG bulk FinFET
No comments:
Post a Comment