- Optimisation of fully depleted SiGe channel with raised source/drain buried oxide nMOSFET
- Reduced ordered binary decision diagram-based combinational circuit synthesis for optimising area, power and temperature
- Nanoscale T-shaped AlGaN/GaN HEMT with improved DC and RF performance
- Electrical parameter analysis of gate-extension on source of germanium tri-gate FinFET
- Impact of structural parameters on DC performance of recessed channel SOI-MOSFET
- Electro-thermal assessment of heterojunction tunnel-FET for low-power digital circuits
- Analysis and circuit sizing performance of a differential amplifier using HPSO algorithm
23 April 2019
Special issue published: "Nanotechnology and High-Speed Electronic Systems"
International Journal of Nanoparticles 11(2) 2019
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