A special issue of International Journal of Power Electronics
Topics of interest include, but are not limited to:
- Diodes
- MOSFETS
- BJTs
- IGBTs
- Thyristor
- High power devices
- Intelligent power modules
- Pulse power devices
- Novel device structures in Si, SiC, GaAs and diamond
- Programmable intelligent power modules
Paper due: 15 January, 2009
Acceptance notification: 15 February, 2009
Final paper version due: 15 March, 2009
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