International Journal of Nanotechnology 19(2/3/4/5) 2022
- ZnO nanostructures assisted growth using different NH4F concentrations for photovoltaic applications
- Analysis on the performance of normalised gain difference power allocation for MIMO-NOMA-based VLC
- Chromaticity study of La2O3-PVA nanofibres prepared by electrospinning process for UV light down conversion for white light emitting diode
- Study of glaring effect from light emitting diodes via lens approach
- Characteristics of titanium dioxide nanotubes annealed under various conditions and quenched using liquid nitrogen
- Investigation on facile synthesis of YAG:Ce nanoceramic powder prepared by microwave solution combustion and its application in white light emission
- X-ray diffraction analysis of gallium oxide thin films synthesised by a simple and cost-effective method
- Characteristics of TiO2-Cu thin films deposited using electrospray technique
- Effect of post-sputter oxidation temperature on the cerium thin films grown by DC sputtering method
- Effects of post-deposition annealing in oxygen ambient of RF magnetron sputtered Ga2O3 thin film
- Encapsulation of Ag nanoparticle-carbon composite and enhancement of visible light ZnO nanorods photodiode
- Synthesis of zinc oxide nanotwins using electrochemical deposition technique at different current densities
- A comparison study of ZnO, InZnO, GaZnO and InGaZnO physical properties and optical bandgap
- Growth, characterisation and thermal stability of AlN/Ti/AlN/SiO2 multilayer selective solar absorber coating for high temperature applications
- Photoelectrochemical activity of magnetron sputtered ZnO thin films: role of thermal annealing
- Nanostructured zinc oxide growth on nickel and palladium seed layer using laser-assisted chemical bath deposition
- Inhomogeneity of InGaN/GaN MQWs in InGaN based blue LED by atom probe tomography and secondary ion mass spectrometry
- Influence of etching time on the porous p-type gallium nitride using alternating current photo-assisted electrochemical etching technique
- Effects of post-annealing on GaN thin films growth using RF magnetron sputtering
- Effect of nucleation time on GaN layer grown on different shapes of patterned sapphire substrate
- Effects of different growth temperatures towards indium incorporation in InGaN quantum well heterostructure
- Influence of growth temperature of p-GaN layer on the characteristics of InGaN/GaN blue light emitting diodes
- Influence of potassium hydroxide molarity and etching time on etching of Al-rich aluminium gallium nitride layer
- Effects of annealing conditions on sol-gel dip coated β-Ga2O3 thin films
- Effects of dry oxidation treatments on the characteristics of gallium oxide thin films prepared using sol-gel spin coating method
- Influence of gas flow rate on the thermal performance of AlNB alloy as a solid thermal interface material for thermal management applications (heat spreading)
- Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties
- High-sensitivity room temperature p-doped and undoped GaN thin film resistive gas sensor
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