Extended versions of papers presented at the 5th IEEE International Nanoelectronics Conference (IEEE INEC).
- Weak-field low-temperature currents calculated by one-particle self-consistent calculation
- Hydrogen ion sensing characteristics of IGZO/Si electrode in EGFET
- Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs
- Investigation of discrete dopant induced variability in silicon nanowire MOSFETs using 3D simulation
- Investigation of the random dopant fluctuations in 20-nm bulk MOSFETs and silicon-on-insulator FinFETs by ion implantation Monte Carlo simulation
- Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors
- Field effect transport properties of chemically treated graphene quantum dots
- InxGa1-xSb n-channel MOSFET: effect of interface states on CV characteristics
- Simulation study of dimensional effect on bipolar resistive random access memory
- Retention behaviour of graphene oxide resistive switching memory
- Characteristics of gate-all-around polycrystalline silicon channel SONOS flash memory
- Investigation of bipolar resistive switching characteristics in Si3N4-based RRAM with metal-insulator-silicon structure
- Characteristics of nitrogen plasma immersion ion implantation treatment on gadolinium oxide resistive switching random access memory
- Negative resistance characterisation and defective trap exploration in ZnO nonvolatile memory devices
- Superior bipolar resistive switching characteristics of Cu-TiO2 based RRAM cells
- Analysis of conduction mechanism in silicon nitride-based RRAM
- Microstructural investigation of through-silicon via fabrication by pulse-reverse electroplating for high density nanoelectronics
- Fabrication, characterisation and modelling of fast flexible semiconductor nanomembrane electronics
- Identification of mobility changes induced by deoxyribo nucleic acid in the inversion regions of ultralong single walled carbon nanotube field-effect transistor using support vector machine and multi-layer perceptron
- Horizontally suspended carbon nanotube bundles patterned on silicon trench sidewalls
- Self-organised hybrid nanostructures composed of the array of vertically aligned carbon nanotubes and planar graphene multi-layer
- Gallium nitride nanowires grown by low pressure chemical vapour deposition on silicon substrate
- Electrical and optical properties of p-type conductive NiO-Pt thin films
- Preparation, characterisation and photocurrent study of sol-gel-derived Al, Mg-doped ZnO transparent thin films
- Structural, optical and photo catalytic properties of Cu-doped ZnO nanoparticles synthesised by co-precipitation method
- Influences of deposition power of GZO thin films on the properties of the heterojunction diode based on a NiO/GZO bi-layer structure
- Flexible and transparent reduced graphene oxide and silk fibroin composite films with kilo-ohm square resistance
- Performance improvement of a triple-junction GaAs-based solar cell using a SiO2-nanopillar/SiO2/TiO2 graded-index antireflection coating
- Effect of trap depth and interfacial energy barrier on charge transport in inverted organic solar cells employing nanostructured ZnO as electron buffer layer
- Synthesis of vanadium oxide/titanium dioxide nanocomposites via sonochemical and hydrothermal process and their utilisation for energy storage application
- High temperature operation In(Ga)As quantum dot infrared photodetector focal plane arrays passivated with 6.5 nm-thick Al2O3 layer
- Improved efficiency of InGaN/GaN light-emitting diodes with Al-doped zinc oxide using dual-plasma-enhanced metal-organic chemical vapour deposition system
- Ab initio simulation of electronic and mechanical properties of aluminium for fatigue early feature investigation
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